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The Institute Functional Oxides for Energy Efficient Information Technologies is looking for:

PhD Student (f/m/d)"Development of ferroelectric tunnel junction memory devices for neuromorphic applications"

Reference No.: EM 2019/8

In the institute Functional Oxides for Energy-Efficient Information Technology we work on functional oxide thin films and nanostructures for energy-efficient data sensing or processing. We focus on material synthesis, detailed structural characterization using advanced methods, and on transport and optical properties in different types of materials and devices. We closely collaborate with various research institutes and universities in Berlin (GrafOx network), Europe and the USA.

Tasks

Requirements


What we offer

Fixed term contract for 36 months . The salary is based on the Collective Agreement for the German Public Service (TVöD-Bund).

We particularly welcome applications from women. Preference will be given to handicapped applicants provided equal suitability.

How to apply

We look forward to receiving your application via our application management system by 23.06.2019. For reasons of data protection regulations, we are unfortunately unable to consider applications that reach us by email or by mail in the application process.

For German version, please click on the following link: German Version.

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